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strong ir fet? IRF40R207 hexfet ? power mosfet d s g application ? ? brushed motor drive applications ? ? bldc motor drive applications ?? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free ? ? rohs compliant, halogen-free v dss 40v r ds(on) typ. 4.2m ?? max 5.1m ?? i d (silicon limited) 90a ? i d (package limited) 56a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature d-pak IRF40R207 g d s gate drain source base part number package type standard pack orderable part number form quantity IRF40R207 d-pak tape and reel 2000 IRF40R207 1 www.irf.com ? 2015 international rectifier submit datasheet feedback march 31, 2015 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 14 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 55a t j = 25c t j = 125c 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) limited by package
? IRF40R207 2 www.irf.com ? 2015 international rectifier submit datasheet feedback march 31, 2015 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, vgs @ 10v (silicon limited) 90? a ? i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 64 ? i dm pulsed drain current ?? 337* p d @t c = 25c maximum power dissipation 83 w linear derating factor 0.56 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 86 mj e as (thermally limited) single pulse avalanche energy ?? 165 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 1.8 c/w ? r ? cs junction-to-ambient (pcb mounted) ? ??? 50 r ? ja junction-to-ambient ? ??? 110 i d @ t c = 25c continuous drain current, v gs @ 10v (wire bond limited) 56 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.039 ??? v/c reference to 25c, i d = 1.0ma ? r ds(on) ??? 4.2 5.1 m ??? v gs = 10v, i d = 55a ? ??? 5.9 ??? v gs = 6.0v, i d = 28a ? v gs(th) gate threshold voltage 2.2 3.0 3.9 v v ds = v gs , i d = 50a i dss drain-to-source leakage current ??? ??? 1.0 a v ds =40 v, v gs = 0v ??? ??? 150 v ds =40v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 2.0 ??? ?? static drain-to-source on-resistance notes: ?? calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 56a. note that curren t limitations arising from heating of t he device leads may occur with some lead mounting arrangements. (refer to an-1140) ? repetitive rating; pulse width limited by max. junction temperature. ?? limited by t jmax , starting t j = 25c, l = 0.056mh,r g = 50 ? , i as = 55a, v gs =10v. ? i sd ? 55a, di/dt ? 890a/s, v dd ? v (br)dss , t j ? 175c. ? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same c harging time as c oss while v ds is rising from 0 to 80% v dss . ?? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while vds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh,r g = 50 ? , i as = 18a, v gs =10v. ?? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. : http://www.irf.com/technica l-info/appnotes/an-994.pdf * pulse drain current is limited at 224a by source bonding technology.
? IRF40R207 3 www.irf.com ? 2015 international rectifier submit datasheet feedback march 31, 2015 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 170 ??? ??? s v ds = 10v, i d = 55a q g total gate charge ??? 45 68 i d = 55a q gs gate-to-source charge ??? 12 ??? v ds = 20v q gd gate-to-drain charge ??? 15 ??? v gs = 10v ? q sync total gate charge sync. (qg? qgd) ??? 30 ??? t d(on) turn-on delay time ??? 7.8 ??? ns v dd = 20v t r rise time ??? 35 ??? i d = 30a t d(off) turn-off delay time ??? 25 ??? r g = 2.7 ?? t f fall time ??? 19 ??? v gs = 10v ? c iss input capacitance ??? 2110 ??? pf ? v gs = 0v c oss output capacitance ??? 340 ??? v ds = 25v c rss reverse transfer capacitance ??? 220 ??? ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) ??? 400 ??? v gs = 0v, vds = 0v to 32v ? c oss eff.(tr) output capacitance (time related) ??? 498 ??? v gs = 0v, vds = 0v to 32v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 90 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 337* integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? 0.9 1.3 v t j = 25c,i s = 55a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? ??? 6.4 ??? v/ns t j = 175c,i s = 55a,v ds = 40v t rr reverse recovery time ??? 21 ??? ns t j = 25c v dd = 34v ??? 22 ??? t j = 125c i f = 55a, q rr reverse recovery charge ??? 13 ??? nc t j = 25c di/dt = 100a/s ??? ??? 15 ??? t j = 125c ? i rrm reverse recovery current ??? 1.1 ??? a t j = 25c ? nc ? d s g
? IRF40R207 4 www.irf.com ? 2015 international rectifier submit datasheet feedback march 31, 2015 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2 4 6 8 10 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 10v ? 60s pulse width -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.6 1.0 1.4 1.8 2.2 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 55a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 8. typical gate charge vs . drain-to-source voltage 0 102030405060 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v vds= 8v i d = 55a
? IRF40R207 5 www.irf.com ? 2015 international rectifier submit datasheet feedback march 31, 2015 ? IRF40R207 fig 10. maximum safe operating area fig 11. drain-to-source breakdown voltage fig 9. typical source-drain diode forward voltage fig 12. typical c oss stored energy fig 13. typical on-resistance vs. drain current -60 -20 20 60 100 140 180 t j , temperature ( c ) 38 40 42 44 46 48 50 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma -5 0 5 10 15 20 25 30 35 40 v ds, drain-to-source voltage (v) 0.0 0.1 0.1 0.2 0.2 0.3 0.3 e n e r g y ( j ) 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 0 4 8 12 16 20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v 0.0 0.5 1.0 1.5 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec 100sec dc operation in this area limited by rds(on) limited by package
? IRF40R207 6 www.irf.com ? 2015 international rectifier submit datasheet feedback march 31, 2015 fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature fig 15. avalanche current vs. pulse width notes on repetitive avalanche curves, figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figures 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figure 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 55a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart = 25c (single pulse)
? IRF40R207 7 www.irf.com ? 2015 international rectifier submit datasheet feedback march 31, 2015 fig 21. typical stored charge vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt fig 17. threshold voltage vs. temperature fig 18. typical recovery current vs. dif/dt -75 -25 25 75 125 175 t j , temperature ( c ) 0.5 1.5 2.5 3.5 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = 50a id = 250a id = 1.0ma id = 1.0a 0 200 400 600 800 di f /dt (a/s) 0 1 2 3 4 5 6 7 8 i r r m ( a ) i f = 37a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 di f /dt (a/s) 0 1 2 3 4 5 6 7 8 i r r m ( a ) i f = 55a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 di f /dt (a/s) 0 10 20 30 40 50 60 70 80 90 100 110 120 q r r ( n c ) i f = 37a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 di f /dt (a/s) 0 10 20 30 40 50 60 70 80 90 100 110 120 q r r ( n c ) i f = 55a v r = 34v t j = 25c t j = 125c
? IRF40R207 8 www.irf.com ? 2015 international rectifier submit datasheet feedback march 31, 2015 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ?
? IRF40R207 9 www.irf.com ? 2015 international rectifier submit datasheet feedback march 31, 2015 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ d-pak (to-252aa) package outline dimensio ns are shown in millimeters (inches) d-pak (to-252aa) part marking information international assembled on ww 16, 2001 in the assembly line "a" or note: "p" in assembly line position example: lot code 1234 this is an irfr120 with assembly indicates "lead-free" product (optional) p = designates lead-free a = assembly site code part number week 16 date code year 1 = 2001 rectifier international logo lot code assembly 3412 irfr120 116a line a 34 rectifier logo irfr120 12 assembly lot code year 1 = 2001 date code part number week 16 "p" in assembly line position indicates "lead-free" qualification to the consumer-level p = designates lead-free product qualified to the consumer level (optional)
? IRF40R207 10 www.irf.com ? 2015 international rectifier submit datasheet feedback march 31, 2015 tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch d-pak (to-252aa) tape & reel information di mensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? IRF40R207 11 www.irf.com ? 2015 international rectifier submit datasheet feedback march 31, 2015 ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? ? qualification level ? industrial (per jedec jesd47f ?? ) moisture sensitivity level d-pak msl1 (per jedec j-std-20d ?? ) rohs compliant yes

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